Integrated circuits with multiple low dielectric-constant inter-metal dielectrics

ABSTRACT

The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the formation of structures inmicroelectronic devices such as integrated circuit devices. Moreparticularly, the invention relates to the formation of vias,interconnect metallization and wiring lines using multiple lowdielectric constant intermetal dielectrics.

2. Description of the Related Art

In the production of microelectronic devices, integrated circuitsutilize multilevel wiring structures for interconnecting regions withindevices and for interconnecting one or more devices within theintegrated circuits. In forming such structures, it is conventional toform a first lower level wiring lines, then an interlevel dielectriclayer and then to form second level wiring lines. One or more metalfilled vias are typically formed in the interlevel dielectric to connectthe first and second level wiring lines.

One conventional method for forming a two level wiring structure is tofirst form a two level interconnect structure over a substrate. Thesurface of a substrate may be the surface of a silicon device structureor the surface of substrate may be an insulating layer. An oxide layeris typically deposited over the substrate by chemical vapor deposition.The first level interconnect structures are defined by a conventionalphotolithography process which forms openings through the oxide layerwhere the first level interconnects will be formed. Generally, theopenings expose portions of conductors in the substrate to whichinterconnects are formed. The openings are filled with a metalinterconnect to form the interconnect and form a metal plug. Then alayer of metal such as aluminum is deposited over the surface of theoxide layer and over the metal plug to a thickness appropriate forsecond level wiring lines. The metal layer is then patterned into thesecond level wiring lines. The second level wiring lines are defined ina conventional photolithography process by providing a layer ofphotoresist over the metal layer, exposing the photoresist through amask and removing portions of the exposed photoresist layer to form aphotoresist etch mask. The portions of the metal layer exposed byopenings in the photoresist mask are then removed by etching and thephotoresist mask is removed by ashing. After the two level interconnectstructure is formed, it is necessary to provide an intermetal dielectric(IMD) layer between the second level wiring lines and covering thesecond level wiring lines to accommodate further processing of theintegrated circuit device. In the past, the intermetal dielectric layermight consist of one or more layers of oxide deposited by plasmaenhanced chemical vapor deposition or other processes.

Prior art integrated circuits produced by single or dual damasceneprocesses with Cu interconnects and low dielectric-constant (k)intermetal dielectrics have used only one kind of low-k dielectric,either inorganic, organic or a hybrid of these two kinds. Thisconventional approach of using the same kind of low-k dielectric forboth metal-level and via-level IMD's has limited process integration andimplementation options. As a result, additional processing steps andadded cost are required. It is desirable whenever possible to reduce thenumber of processing steps required to form a device because reducingthe number of processing steps shortens the time required to produce thedevice and because eliminating processing steps improves yields and soreduces costs.

The present invention uses two or more dissimilar low-k dielectrics forthe intermetal dielectrics of Cu-based dual damascene backends ofintegrated circuits. The use of both organic and inorganic low-kdielectrics offers several advantages due to the significantly differentplasma etch characteristics of these two kinds of dielectrics. Onedielectric serves as an etchstop in etching the other dielectric. Noadditional oxide or nitride etchstop layer is required. High performanceis achieved due to the lower parasitic capacitance resulting from theuse of low-k dielectrics.

SUMMARY OF THE INVENTION

The invention provides an integrated circuit structure which comprises asubstrate and (a) an inorganic layer on the substrate which comprises apattern of metal lines on the substrate and an inorganic dielectric onthe substrate between the metal lines; and (b) an organic layer on theinorganic layer which comprises an organic dielectric having metalfilled vias therethrough which connect to the metal lines of theinorganic layer. Preferably the integrated circuit structure comprises(c) an additional inorganic layer on the organic layer which comprises apattern of additional metal lines on the organic layer and an inorganicdielectric on the organic layer between the additional metal lines; and(d) an additional organic layer on the additional inorganic layer whichcomprises an organic dielectric having metal filled vias therethroughwhich connect to the additional metal lines of the additional inorganiclayer.

The invention also provides an integrated circuit structure whichcomprises a substrate and (a) an organic layer on the substrate whichcomprises a pattern of metal lines on the substrate and an organicdielectric on the substrate between the metal lines; and (b) aninorganic layer on the organic layer which comprises an inorganicdielectric having metal filled vias therethrough which connect to themetal lines of the organic layer. Preferably the integrated circuitstructure comprises (c) an additional organic layer on the inorganiclayer which comprises a pattern of additional metal lines on theinorganic layer and an organic dielectric on the inorganic layer betweenthe additional metal lines; and (d) an additional inorganic layer on theadditional organic layer which comprises an inorganic dielectric havingmetal filled vias therethrough which connect to the additional metallines of the additional organic layer.

The invention also provides a dielectric coated substrate whichcomprises:

(a) a first dielectric composition film on a substrate; and

(b) a second dielectric composition film on the first dielectriccomposition film;

wherein the first dielectric composition and the second dielectriccomposition have substantially different etch resistance.

The invention further provides a process for producing an integratedcircuit structure which comprises

(a) providing a substrate which comprises a pattern of metal lines onthe substrate and a dielectric on the substrate between the metal lines;

(b) depositing an organic dielectric layer on the substrate;

(c) depositing an inorganic dielectric layer on the organic dielectric;

(d) etching a pattern of vias through the inorganic dielectric layer;

(e) etching a pattern of vias through the organic dielectric layer whichcorrespond to the pattern of vias through the inorganic dielectriclayer;

(f) applying a photoresist to the top of the inorganic dielectric layerand filling the vias in the organic dielectric layer and the inorganicdielectric layer with photoresist;

(g) imagewise removing a portion of the photoresist from the top of theinorganic dielectric layer; and removing a portion and leaving a portionof the photoresist through a thickness of the inorganic dielectriclayer;

(h) removing part of the inorganic dielectric layer underlying theportions of the photoresist removed from the top of the inorganicdielectric layer to form trenches in the inorganic dielectric layer;

(i) removing the balance of the photoresist from the top of theinorganic dielectric layer and from the vias;

(j) filling the vias in the organic dielectric and the trenches in theinorganic dielectric with a metal.

The invention still further provides a process for producing anintegrated circuit structure which comprises

(a) providing a substrate, which comprises a pattern of metal lines onthe substrate and a dielectric on the substrate between the metal lines;

(b) depositing an organic via level dielectric on the substrate;

(c) depositing an thin inorganic dielectric layer on the organic vialevel dielectric;

(d) imagewise patterning and removing a portion of the thin inorganicdielectric layer thus defining vias through the thin inorganicdielectric layer;

(e) depositing a thin organic dielectric etchstop material layer on thethin inorganic dielectric layer and filling the vias in the thininorganic dielectric layer with the organic dielectric material;

(f) depositing a metal level inorganic dielectric layer on the organicdielectric etchstop layer;

(g) imagewise patterning and removing a portion of the metal levelinorganic dielectric layer down to the organic dielectric etchstopmaterial layer to form trenches in the metal level inorganic dielectriclayer;

(h) removing the portion of the organic dielectric etchstop materiallayer underlying the corresponding removed portion of the metal levelinorganic dielectric to form trenches therein, and removing the organicetchstop material from the vias in the thin inorganic dielectric layer;

(i) removing the portion of the organic via level dielectric layerunderlying the thin inorganic dielectric layer thus forming vias throughthe organic via level dielectric layer down to the metal lines;

(j) filling the vias in the via level organic dielectric layer and thethin inorganic dielectric layer, and trenches in the organic dielectricetchstop layer and metal level inorganic dielectric layer with a metal.

The invention also provides a process for producing an integratedcircuit structure which comprises

(a) providing a substrate, which comprises a pattern of metal lines onthe substrate and a dielectric on the substrate between the metal lines;

(b) depositing an organic via level dielectric layer on the substrate;

(c) depositing an thin inorganic dielectric layer on the organic vialevel dielectric;

(d) depositing a thin organic dielectric etchstop material layer on thethin inorganic dielectric layer;

(e) depositing a metal level inorganic dielectric layer on the organicdielectric etchstop layer;

(f) imagewise patterning and removing a portion of the metal levelinorganic dielectric layer down to the organic dielectric etchstopmaterial layer to form vias in the metal level inorganic dielectriclayer;

(g) removing the portion of the organic dielectric etchstop materiallayer underlying the corresponding removed portions of the metal levelinorganic dielectric layer to form vias in the organic dielectricetchstop material layer;

(h) removing the portion of the thin inorganic dielectric layerunderlying the corresponding removed portions of the organic dielectricetchstop material layer to form vias in the thin inorganic dielectriclayer;

(i) covering the top of the metal level inorganic dielectric layer witha photoresist and filling the vias in the metal level inorganicdielectric layer, the organic dielectric etchstop material layer and thethin inorganic dielectric layer with photoresist;

(j) imagewise patterning and removing a portion of the photoresist fromthe top of the metal level inorganic dielectric layer; and removing aportion and leaving a portion of the photoresist through a thickness ofthe metal level inorganic dielectric layer;

(k) removing part of the metal level inorganic dielectric layerunderlying the portions of the photoresist removed from the top of theinorganic dielectric layer to form trenches in the metal level inorganicdielectric layer;

(l) removing the balance of the photoresist from the top of the metallevel inorganic dielectric layer and from the vias; and removing theportion of the organic dielectric etchstop material layer underlying thetrenches until the thin inorganic dielectric layer is reached;

(m) removing the portion of the organic via level dielectric layerunderlying the vias in the thin inorganic dielectric layer;

(n) filling the vias in the via level organic dielectric layer and thethin inorganic dielectric layer, and trenches in the organic dielectricetchstop layer and metal level inorganic dielectric layer with a metal.

The invention furthermore provides a process for producing an integratedcircuit structure which comprises

(a) providing a substrate, which comprises a pattern of metal lines onthe substrate and a dielectric on the substrate between the metal lines;

(b) depositing an organic via level dielectric layer on the substrate;

(c) depositing an thin inorganic dielectric layer on the organic vialevel dielectric

(d) depositing a thin organic dielectric etchstop material layer on thethin inorganic dielectric layer;

(e) depositing a metal level inorganic dielectric layer on the organicdielectric etchstop layer;

(f) imagewise patterning and removing a portion of the metal levelinorganic dielectric layer down to the organic dielectric etchstopmaterial layer to form vias in the metal level inorganic dielectriclayer;

(g) removing the portion of the organic dielectric etchstop materiallayer underlying the corresponding removed portions of the metal levelinorganic dielectric layer to form vias in the organic dielectricetchstop material layer;

(h) removing the portion of the thin inorganic dielectric layerunderlying the corresponding removed portions of the organic dielectricetchstop material layer to form vias in the thin inorganic dielectriclayer;

(i) removing the portion of the organic via level dielectric layerunderlying the corresponding removed portions of the thin inorganicdielectric layer to form vias in the organic via level dielectric layer;

(j) covering the top of the metal level inorganic dielectric layer witha photoresist and filling the vias in the metal level inorganicdielectric layer, the organic dielectric etchstop material layer, thethin inorganic dielectric layer and the organic via level dielectriclayer with photoresist;

(k) imagewise patterning and removing a portion of the photoresist fromthe top of the inorganic dielectric layer; and removing a portion andleaving a portion of the photoresist through a thickness of the metallevel inorganic dielectric layer;

(l) removing part of the metal level inorganic dielectric layerunderlying the portions of the photoresist removed from the top of theinorganic dielectric layer to form trenches in the metal level inorganicdielectric layer;

(m) removing the balance of the photoresist from the top of the metallevel inorganic dielectric layer and from the vias; and removing theportion of the organic dielectric etchstop material layer underlying thetrenches until the thin inorganic dielectric layer is reached;

(n) filling the vias in the via level organic dielectric layer and thethin inorganic dielectric layer, and trenches in the organic dielectricetchstop layer and metal level inorganic dielectric layer with a metal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a first integrated circuit architecture of multi-levelinterconnections fabricated according to this invention.

FIG. 2 shows a second integrated circuit architecture of multi-levelinterconnections fabricated according to this invention.

FIG. 3 shows the formation process for a first embodiment of theinvention resulting after organic low-k dielectric deposition; inorganiclow-k dielectric deposition and resist spin and bake.

FIG. 4 shows the formation process resulting after via mask and resistdevelopment and metal trench inorganic low-k dielectric etch.

FIG. 5 shows the process result after via organic low-k dielectric etch.

FIG. 6 shows the process result after resist spin and bake.

FIG. 7 shows the result after metal trench mask and resist development.

FIG. 8 shows the result after inorganic low-k dielectric etch.

FIG. 9 shows the result after selective removal of resist.

FIG. 10 shows the result after Cu interconnect processing.

FIG. 11 shows the formation process for a second embodiment of theinvention resulting after organic low-k dielectric deposition; inorganiclow-k dielectric deposition and resist spin and bake.

FIG. 12 shows the formation process for a second embodiment after viamask and resist development and inorganic low-k dielectric etch.

FIG. 13 shows the process after resist removal.

FIG. 14 shows the process after organic low-k dielectric deposition,inorganic low-k dielectric deposition, resist spin and bake and metaltrench mask and resist development.

FIG. 15 shows the process after inorganic low-k dielectric etch.

FIG. 16 shows the process after organic low-k dielectric etch.

FIG. 17 shows the process after organic low-k dielectric etch

FIG. 18 shows the second embodiment process after Cu interconnectprocessing.

FIG. 19 shows a third embodiment of the invention after organic low-kdielectric deposition, inorganic low-k dielectric deposition, organiclow-k dielectric deposition, inorganic low-k dielectric deposition andresist spin and bake.

FIG. 20 shows the process after via mask and resist development andinorganic low-k dielectric etch.

FIG. 21 shows the process result after organic low-k dielectric etch andinorganic low-k dielectric etch.

FIG. 22 shows the process result after selective resist removal.

FIG. 23 shows the process result after resist spin and bake.

FIG. 24 shows the process result after metal trench mask and resistdevelopment.

FIG. 25 shows the process result after inorganic low-k dielectric etch.

FIG. 26 shows the process result after organic low-k dielectric etch.

FIG. 27 shows the process result after via inorganic low-k dielectricetch.

FIG. 28 shows a fourth embodiment of the invention after organic low-kdielectric etch.

FIG. 29 shows the process result after resist spin and bake.

FIG. 30 shows the process result after metal trench mask and resistdevelopment.

FIG. 31 shows the process result after inorganic low-k dielectric etch.

FIG. 32 shows the process result after organic low-k dielectric andresist etch.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The integrated circuit architecture produced by a first processembodiment of the invention is show in FIG. 1. This structure uses twodifferent kinds of low-k dielectric thin films for the IMD, onedielectric is organic and the other dielectric is inorganic. Shown inFIG. 1, architecture I, is the part of the backend of an integratedcircuit of multi-level interconnections fabricated according to thisinvention. An organic low-k dielectric is used for via-level IMD and aninorganic low-k dielectric is used for metal-level IMD. The architectureII, structure is produced according to another embodiment of theinvention. Architecture II differs from architecture I in that two thinlayers of low-k dielectrics, the top one organic and the bottominorganic, are added in between via-level and metal-level IMD's. Theprocess steps used for the fabrication of via 1 and metal 2 can berepeated again for the upper levels of vias and metals. In the manyembodiments of the invention, alternating dielectric layers have is asignificant difference in etch rate. The invention takes advantage of asignificant difference in plasma etch rate between organic and inorganicdielectrics. This is not available when the same dielectric is employedfor both via-level and metal-level IMD's. In oxygen-based plasmas,organic dielectrics etch tremendously faster than inorganic dielectrics.Inversely, in carbon fluoride based plasmas, inorganic dielectrics etchmuch faster than organic dielectrics.

A first process embodiment of the invention is exemplified by FIGS. 3through 10. These figures show the process flow after the formation ofthe first-level interconnect or Metal 1, and the process flow from Via 1level through the second-level of interconnect or Metal 2. However, thesame processing steps can be repeated again for upper levels of vias andinterconnects. FIG. 3 shows the interim structure after step 1 which isa deposition of an organic low-k dielectric, step which is a depositionof an in organic low-k dielectric and deposition and baking of aphotoresist. The organic low-k dielectric is applied to a substratehaving a pattern of metal lines on its surface. Typical substratesinclude those suitable to be processed into an integrated circuit orother microelectronic device. Suitable substrates for the presentinvention non-exclusively include semiconductor materials such asgallium arsenide (GaAs), germanium, silicon, silicon germanium, lithiumniobate and compositions containing silicon such as crystalline silicon,polysilicon, amorphous silicon, epitaxial silicon, and silicon dioxide(SiO₂) and mixtures thereof The lines are typically formed by well knownlithographic techniques. Suitable materials for the lines includealuminum, aluminum alloys, copper, copper alloys, titanium, tantalum,and tungsten. These lines form the conductors of an integrated circuit.Such are typically closely separated from one another at distancespreferably of from about 20 micrometers or less, more preferably fromabout 1 micrometer or less, and most preferably of from about 0.05 toabout 1 micrometer.

The organic and inorganic dielectric compositions may comprise any of awide variety of dielectric forming materials which are well known in theart for use in the formation of microelectronic devices. The dielectriclayers may nonexclusively include silicon containing spin-on glasses,i.e. silicon containing polymer such as an alkoxysilane polymer, asilsesquioxane polymer, a siloxane polymer; a poly(arylene ether), afluorinated poly(arylene ether), other polymeric dielectric materials,nanoporous silica or mixtures thereof. The only criteria for thisinvention is that organic dielectrics are formed adjacent to inorganicdielectrics. Useful organic dielectrics are those which follow which arecarbon containing and inorganics are those which follow which are notcarbon containing.

One useful polymeric dielectric material useful for the inventioninclude an nanoporous silica alkoxysilane polymer formed from analkoxysilane monomer which has the formula:

wherein at least 2 of the R groups are independently C₁ to C₄ alkoxygroups and the balance, if any, are independently selected from thegroup consisting of hydrogen, alkyl, phenyl, halogen, substitutedphenyl. Preferably each R is methoxy, ethoxy or propoxy. Such arecommercially available from AlliedSignal as Nanoglass™. The mostpreferred alkoxysilane monomer is tetraethoxysilane (TEOS). Also usefulare hydrogensiloxanes which have the formula[(HSiO_(1.5))_(x)O_(y)]_(n), hydrogensilsesquioxanes which have theformula (HSiO_(1.5))_(n), and hydroorganosiloxanes which have theformulae [(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n),[(HSiO_(1.5))_(x)(RSiO_(1.5))_(y)]_(n), and[(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n). In each of these polymerformulae, x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20,n=1 to about 4,000, and each R is independently H, C₁ to C₈ alkyl or C₆to C₁₂ aryl. The weight average molecular weight may range from about1,000 to about 220,000. In the preferred embodiment n ranges from about100 to about 800 yielding a molecular weight of from about 5,000 toabout 45,000. More preferably, n ranges from about 250 to about 650yielding a molecular weight of from about 14,000 to about 36,000. Usefulpolymers within the context of this invention nonexclusively includehydrogensiloxane, hydrogensilsesquioxane, hydrogenmethylsiloxane,hydrogenethylsiloxane, hydrogenpropylsiloxane, hydrogenbutylsiloxane,hydrogentert-butylsiloxane, hydrogenphenylsiloxane,hydrogenmethylsilsesquioxane, hydrogenethylsilsesquioxane,hydrogenpropylsilsesquioxane, hydrogenbutylsilsesquioxane,hydrogentert-butylsilsesquioxane and hydrogenphenylsilsesquioxane andmixtures thereof. Useful organic polymers include polyimides,fluorinated and nonfluorinated polymers, in particular fluorinated andnonfluorinated poly(arylethers) available under the tradename FLARE™from AlliedSignal Inc., and copolymer mixtures thereof. Thehydroorganosiloxanes, poly(arylene ethers), fluorinated poly(aryleneethers) and mixtures thereof are preferred. Suitable poly(aryleneethers) or fluorinated poly(arylene ethers) are known in the art fromU.S. Pat. Nos. 5,155,175; 5,114,780 and 5,115,082. Preferredpoly(arylene ethers) and fluorinated poly(arylene ethers) are disclosedin U.S. patent application Ser. No. 08/990,157 filed Dec. 12, 1997 whichis incorporated herein by reference. Preferred siloxane materialssuitable for use in this invention are commercially available fromAlliedSignal Inc. under the tradename Accuglass® T-11, T-12 and T-14.Also useful are methylated siloxane polymers available from AlliedSignalInc. under the tradenames Purespin™ and Accuspin® T18, T23 and T24.

Preferred silicon containing dielectric resins include polymers having aformula selected from the group consisting of[(HSiO_(1.5))_(x)O_(y)]_(n),(HSiO_(1.5))_(n),[(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n),[(HSiO_(1.5))_(x)(RSiO_(1.5))_(y)]_(n) and[(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n) wherein x=about 6 to about20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and eachR is independently H, C₁ to C₈ alkyl or C₆ to C₁₂ aryl which aredisclosed in U.S. patent application Ser. No. 08/955,802 filed Oct. 22,1997 and which is incorporated herein by reference. Also preferred arecertain low organic content silicon containing polymers such as thosehaving the formula I:

[H—SiO_(1.5)]_(n)[R—SiO_(1.5)]_(m),

[H_(0.4)—SiO_(1.5-1.8)]_(n)[R_(0.4-1.0)—SiO_(1.5-1.8)]_(m),

[H_(0-1.0)—SiO_(1.5-2.0)]_(n)[R—SiO_(1.5)]_(m),

[H—SiO_(1.5)]_(x)[R—SiO_(1.5)]_(y)[SiO₂]_(z),

wherein the sum of n and m, or the sum or x, y and z is from about 8 toabout 5000, and m and y are selected such that carbon containingsubstituents are present in an amount of less than about 40 Molepercent. Polymers having the structure I are of low organic contentwhere the carbon containing substituents are present in an amount ofless than about 40 mole percent. These polymers are described more fullyin U.S. patent application Ser. No. 09/044,831, filed Mar. 20, 1998,which is incorporated herein by reference. Also preferred are certainhigh organic content silicon containing polymers such as those havingthe formula II:

[HSiO_(1.5)]_(n)[RSiO_(1.5)]_(m),

[H_(0.4-1.0)SiO_(1.5-1.8)]_(n)[R_(0.4-1.0)SiO_(1.5-1.8)]_(m),

[H_(0-1.0)SiO_(1.5-2.0)]_(n)[RSiO_(1.5)]_(m),

wherein the sum of n and m is from about 8 to about 5000 and m isselected such that the carbon containing substituent is present in anamount of from about 40 Mole percent or greater; and

[HSiO_(1.5)]_(x)[RSiO_(1.5)]_(y)[SiO₂]_(z);

wherein the sum of x, y and z is from about 8 to about 5000 and y isselected such that the carbon containing substituent is present in anamount of about 40 Mole % or greater; and wherein R is selected fromsubstituted and unsubstituted straight chain and branched alkyl groups,cycloalkyl groups, substituted and unsubstituted aryl groups, andmixtures thereof. The specific mole percent of carbon containingsubstituents is a function of the ratio of the amounts of startingmaterials. Polymers having the structure II which are of high organiccontent where the carbon containing substituents are present in anamount of about 40 mole percent or more. These polymers are describedmore fully in U.S. patent application Ser. No. 09/044,798, filed Mar.20, 1998, which is incorporated herein by reference.

The polymer may be present in the dielectric composition in a pure orneat state (not mixed with any solvents) or it may be present in asolution where it is mixed with solvents. When solvents are present, thepolymer is preferably present in an amount of from about 1% to about 50%by weight of the polymer, more preferably from about 3% to about 20%.The solvent component is preferably present in an amount of from about50% to about 99% by weight of the dielectric composition, morepreferably from about 80% to about 97%. Suitable solvents nonexclusivelyinclude aprotic solvents such as cyclic ketones includingcyclopentanone, cyclohexanone, cyclohexanone and cyclooctanone; cyclicamides such as N-alkylpyrrolidinone wherein the alkyl group has from 1to about 4 carbon atoms, and N-cyclohexyl-pyrrolidinone, and mixturesthereof.

Once formed, the dielectric composition is deposited onto a suitablesubstrate to thereby form a polymer layer on the substrate. Depositionmay be conducted via conventional spin-coating, dip coating, rollercoating, spraying, chemical vapor deposition methods, or meniscuscoating methods which are well-known in the art. Spin coating is mostpreferred. The thickness of the polymer layer on the substrate may varydepending on the deposition procedure and parameter setup, but typicallythe thickness may range from about 500 Å to about 50,000 Å, andpreferably from about 2000 Å to about 12000 Å. The amount of dielectriccomposition applied to the substrate may vary from about 1 ml to about10 ml, and preferably from about 2 ml to about 8 ml. In the preferredembodiment, the liquid dielectric composition is spun onto the uppersurface the substrate according to known spin techniques. Preferably,the polymer layer is applied by centrally applying the liquid dielectriccomposition to the substrate and then spinning the substrate on arotating wheel at speeds ranging from about 500 to about 6000 rpm,preferably from about 1500 to about 4000 rpm, for about 5 to about 60seconds, preferably from about 10 to about 30 seconds, in order tospread the solution evenly across the substrate surface. The polymerlayer preferably has a density of from about 1 g/cm³ to about 3 g/cm³.

The dielectric layer may optionally be heated to expel residual solventor to increase its molecular weight. The heating may be conducted byconventional means such as heating on a hot plate in air or in an inertatmosphere, or it may occur in a furnace or oven in air, or in an inertatmosphere, or it may occur in a vacuum furnace or vacuum oven. Heatingis preferably conducted at a temperature of from about 80° C. to about500° C., and more preferably from about 150° C. to about 425° C. Thisheating is preferably performed from about 1 minute to about 360minutes, and more preferably from about 2 to about 60 minutes. Thepolymer layer may also optionally be exposed to actinic light, such asUV light, to increase its molecular weight. The amount of exposure mayrange from about 100 mJ/cm² to about 300 mJ/cm². The dielectric layersmay optionally be cured by overall exposed to electron beam radiation.Electron beam exposure may be controlled by setting the beamacceleration. Electron beam radiation may take place in any chamberhaving a means for providing electron beam radiation to substratesplaced therein. It is preferred that the electron beam exposing step isconducted with a wide, large beam of electron radiation from alarge-area electron beam source. Preferably, an electron beam chamber isused which provides a large area electron source. Suitable electron beamchambers are commercially available from Electron Vision, a unit ofAlliedSignal Inc., under the trade name “ElectronCure™”. The principlesof operation and performance characteristics of such device aredescribed in U.S. Pat. No. 5,001,178, the disclosure of which isincorporated herein by reference. The temperature of the electron beamexposure preferably ranges from about 20° C. to about 450° C., morepreferably from about 50° C. to about 400° C. and most preferably fromabout 200° C. to about 400° C. The electron beam energy is preferablyfrom about 0.5 KeV to about 30 KeV, and more preferably from about 3 toabout 10 KeV. The dose of electrons is preferably from about 1 to about50,000 μC/cm² and more preferably from about 50 to about 20,000 μC/cm².The gas ambient in the electron beam tool can be any of the followinggases: nitrogen, oxygen, hydrogen, argon, a blend of hydrogen andnitrogen, ammonia, xenon or any combination of these gases. The electronbeam current is preferably from about 1 to about 40 mA, and morepreferably from about 5 to about 20 mA. Preferably, the electron beamexposing step is conducted with a wide, large beam of electron beamradiation from a uniform large-are electron beam source which covers anarea of from about 4 inches to about 256 square inches.

Vias are formed in the inorganic dielectric layer by well knownphotolithographic techniques using a photoresist composition. FIG. 4shows the coated substrate after step 4, i.e. imagewise patterning andremoval of portions of the resist and step 5, an inorganic dielectricetch to form cavities through these layers. Such are formed in a mannerwell known in the art such as by coating the photoresist, imagewiseexposing to actinic radiation such as through a suitable mask,developing the photoresist and etching away portions of the inorganicdielectric to form cavities. The photoresist composition may be positiveworking or negative working and are generally commercially available.Suitable positive working photoresists are well known in the art and maycomprise an o-quinone diazide radiation sensitizer. The o-quinonediazide sensitizers include the o-quinone-4-or-5-sulfonyl-diazidesdisclosed in U.S. Pat. Nos. 2,797,213; 3,106,465; 3,148,983; 3,130,047;3,201,329; 3,785,825; and 3,802,885. When o-quinone diazides are used,preferred binding resins include a water insoluble, aqueous alkalinesoluble or swellable binding resin, which is preferably a novolak.Suitable positive photodielectric resins may be obtained commercially,for example, under the trade name of AZ-P4620 from Clariant Corporationof Somerville, N.J. The photoresist is then imagewise exposed to actinicradiation such as light in the visible, ultraviolet or infrared regionsof the spectrum through a mask, or scanned by an electron beam, ion orneutron beam or X-ray radiation. Actinic radiation may be in the form ofincoherent light or coherent light, for example, light from a laser. Thephotoresist is then imagewise developed using a suitable solvent, suchas an aqueous alkaline solution. Optionally the photoresist is heated tocure the image portions thereof and thereafter developed to remove thenonimage portions and define a via mask. Vias are then formed by etchingtechniques which are well known in the art. Next the photoresist iscompletely removed from the inorganic dielectric surface by plasmaetching. Plasma generators which are capable of such etching aredescribed in U.S. Pat. Nos. 5,174,856 and 5,200,031.

Next, in a sixth step, the organic low-k dielectric is etched by an etchchemistry which does not remove the inorganic low-k dielectric. Theresulting structure with vias is shown in FIG. 5. Next, a resistapplication step 7 is required for metal trench patterning. Anotherphotoresist is applied to the top of the inorganic dielectric layer andfills the vias in the organic dielectric layer and the inorganicdielectric layer with photoresist. FIG. 6 shows the structure afterapplication and baking of the layer of resist material. In an eighthstep, one imagewise exposes the resist through a metal trench mask,imagewise removes a portion of the photoresist from the top of theinorganic dielectric layer; and removes a portion and leaves a portionof the photoresist through a thickness of the inorganic dielectriclayer. The result is seen in FIG. 7.

A ninth step requires removing part of the inorganic dielectric layerunderlying the portions of the photoresist removed from the top of theinorganic dielectric layer to form trenches in the inorganic dielectriclayer. Due to chemical differences between the inorganic and organicdielectrics, the plasma etch rate of low-k organic dielectric can bemade to be significantly less than the plasma etch rate of the inorganicdielectric. As a result, the etch stops once the inorganic dielectric ontop of the organic dielectric is cleared. No etchstop is required inthis approach. The result is seen in FIG. 8.

The next step 10 removes the balance of the photoresist from the top ofthe inorganic dielectric layer and from the vias and the result is shownin FIG. 9. Step 11 fills the vias in the organic dielectric and thetrenches in the inorganic dielectric with a metal as seen in FIG. 10.Suitable metals include aluminum, aluminum alloys, copper, copperalloys, tantalum, tungsten, titanium or other metals or mixtures thereofas typically employed in the formation of microelectronic devices. Themetal may be applied by such techniques as vapor deposition, sputtering,evaporation and the like. Copper is most preferred. The thickness of themetal layers is preferably from about 3,000 to 15,000 Angstroms.Typically the metal is applied by first forming a barrier metal seedinglayer on the walls of the vias and the top dielectric. Then the balanceof the metal is applied. As used herein, the term “a metal” includesamalgams of metals. A barrier metal serves to prevent diffusion of theconductive metal into the dielectric layers. The barrier metal may be,for example, Ti or a nitride such TaN or TiN. Copper interconnectprocessing is used to form a self-aligned metal barrier on the top ofthe copper interconnect. With a metal barrier on top, the commonly usedsilicon nitride barrier is not necessary. It is to be understood thatthese steps may be repeated to provide a series of suitable layers andconductive paths over one another on the substrate to produce thearchitecture of FIG. 1. The architecture shown in FIG. 1 has severaldistinct features. A separation is not needed between two adjacentIMD's. When separation layers are required, low-k dielectric films canbe used with the approach taken in this invention which utilizes twodissimilar low-k dielectric films for IMD's (FIG. 2). In a conventionalapproach, CVD oxide or silicon nitride is commonly used as separationlayer. Both these prior inorganic dielectrics have the majordisadvantage of having a high dielectric constant, 4 and 7,respectively, for silicon oxide and silicon nitride. Concerning thefunctions of the separation layers, heretofore a high dielectricconstant material such as silicon nitride, is provided as an etchstop inopening metal trenches. In architecture I, there is no need to have suchan etchstop since the organic low-k dielectric used for via-level IMDetches much slower than the inorganic low-k dielectric and thus it is anetchstop by itself.

Separation layers are also used as an etchstop in opening borderlessvias when the vias are misaligned to the underlying metal line. Thepresence of the separation layers can prevent the creation of deep andnarrow trenches, which are a major yield and reliability concern.However, a separation layer is not required for this invention for thereason that two dissimilar dielectrics are used and they aresignificantly different in their plasma etch characteristics. Thisembodiment has distinct advantages. Vias are not enlarged when a metaltrench mask is misaligned in the direction away from the underlying viaas shown in FIGS. 7-10. There is an issue of partially landed vias whena via is over-sized and/or misaligned to the underlying metal line asshown in FIG. 1. In the conventional approach, via over-sizing can beprevented by the addition of a separation layer between the adjacentIMD's. Such a separation layer is not required in this embodiment due tothe fact that there is an extremely high plasma etch selectivity betweeninorganic and organic dielectrics in metal trench etching. Anotheradvantage of this embodiment is its compatibility with borderless vias.There are two vias shown in FIG. 1. The bottom of these vias is notfully landed on the underlying Cu lines. This results from the use ofborderless vias when they are misaligned in the direction away frommetal lines. Prior efforts have been made to prevent the creation ofdeep and narrow trenches at the bottom of partially landed via. In theconventional approach, an etchstop layer, such as silicon nitride, isoften added to prevent the formation of undesirable trenches. However,an etchstop is not necessary in this embodiment since there is asignificantly high plasma etch selectivity between organic and inorganicdielectrics in opening vias.

When it is impractical to remove resist selectively in the presence oforganic dielectrics, a different architecture, architecture II, is used.The following embodiments are to construct architecture II as shown inFIG. 2. Architecture II differs from architecture I in that the formerhas separation layers between metal-level and via-level IMD's.

A second embodiment of the invention is represented by the process stepsshown in FIGS. 11-18. The process flow commences after the formation ofa first level interconnect or Metal 1 as shown in FIG. 2. The processflow covers from Via 1 level through the second-level of interconnect orMetal 2. However, the same processing steps can be repeated again forupper levels of vias and interconnects. The same substrate, organicdielectric and inorganic dielectric materials may be used as inembodiment 1. FIG. 11 shows the formation process for a secondembodiment of the invention. One begins with a substrate, whichcomprises a pattern of metal lines on the substrate and a dielectric onthe substrate between the metal lines as with embodiment 1. An organiclow-k dielectric is then deposited onto the substrate followed bydeposition of a thin inorganic low-k dielectric and spin-on and bakingof a photoresist. The resist is imagewise patterned and removed bydevelopment and a portion of the thin inorganic dielectric layer isremoved by etching thus defining vias through the thin inorganicdielectric layer. FIG. 12 shows the formation after via mask and resistdevelopment and inorganic low-k dielectric etch. FIG. 13 shows theprocess after resist removal. Some of the exposed part of the organiclow-k dielectric will usually be removed to a limited extent. However,such is not critical since the part of organic dielectric which is notcovered by a thin layer of inorganic dielectric will be totally removedlater. Then a thin organic dielectric etchstop material layer isdeposited on the thin inorganic dielectric layer. This also fills thevias in the thin inorganic dielectric layer with the organic dielectricmaterial. Then a metal level inorganic dielectric layer is deposited onthe organic dielectric etchstop layer. The metal level inorganicdielectric is then imagewise patterned. This may be done by depositing,baking, exposing and developing a photoresist. FIG. 14 shows the processafter organic low-k dielectric deposition, inorganic low-k dielectricdeposition, resist spin and bake and metal trench mask and resistdevelopment. This inorganic low-k dielectric layer is for metal-levelIMD. The portion of the inorganic dielectric layer under the removedpart of the photoresist is then etched down to the organic dielectricetchstop material layer to form trenches in the metal level inorganicdielectric layer. The organic low-k dielectric serves as etchstop sinceit etches significantly slower than the inorganic low-k dielectric. FIG.15 shows the metal trenches produced at this step after inorganic low-kdielectric etch. The portion of the organic dielectric etchstop materiallayer underlying the corresponding removed portion of the metal levelinorganic dielectric is then removed by etching to form trenchestherein. At the same time the organic etchstop material is removed fromthe vias in the thin inorganic dielectric layer. Some resist is removedat this step. FIG. 16 shows the process after the organic low-kdielectric etch step. Then one removes the portion of the organic vialevel dielectric layer underlying the thin inorganic dielectric layerthus forming vias through the organic via level dielectric layer down tothe metal lines. The inorganic low-k dielectric on top of the organiclow-k dielectric serves as mask. Resist is also removed at this step.Steps 12 and 13 can be combined together into a single step. The resultis shown in FIG. 17. Thereafter the vias are filled with a metal in thevia level organic dielectric layer and the thin inorganic dielectriclayer, and trenches in the organic dielectric etchstop layer and metallevel inorganic dielectric layer with a metal as shown in FIG. 18.Repetition of the process produces the structure of architecture II asseen in FIG. 2.

A third embodiment of the invention is represented by the process stepsshown in FIGS. 19-27. The process flow after the formation of thefirst-level interconnect or Metal 1. The process flow covers from Via 1level through the second-level of interconnect or Metal 2. However, thesame processing steps can be repeated again for upper levels of vias andinterconnects. In this embodiment one providing a substrate, whichcomprises a pattern of metal lines on the substrate and a dielectric onthe substrate between the metal lines as with the previous embodiments.An organic via level dielectric layer is deposited on the substrate; athin inorganic dielectric layer is deposited on the organic via leveldielectric and a thin organic dielectric etchstop material layer isdeposited on the thin inorganic dielectric layer. The thin organicdielectric etchstop material layer and the thin inorganic low-kdielectric layer together separate the via-level and metal-level IMD's.Then a metal level inorganic dielectric layer is deposited on theorganic dielectric etchstop layer. A photoresist is deposited on themetal level inorganic dielectric layer to produce the structure of FIG.19. The photoresist is imagewise exposed, baked and developed as before.After removing a portion of the metal level inorganic dielectric layerdown to the organic dielectric etchstop material layer vias are formedin the metal level inorganic dielectric layer as shown in FIG. 20. Afterremoving the portion of the organic dielectric etchstop material layerunderlying the corresponding removed portions of the metal levelinorganic dielectric layer vias are formed in the organic dielectricetchstop material layer. After removing the portion of the thininorganic dielectric layer underlying the corresponding removed portionsof the organic dielectric etchstop material layer vias are formed in thethin inorganic dielectric layer. The result is seen in FIG. 21. Theresist is then removed to provide the structure of FIG. 22. One thencovers the top of the metal level inorganic dielectric layer with aphotoresist and fills the vias in the metal level inorganic dielectriclayer, the organic dielectric etchstop material layer and the thininorganic dielectric layer with photoresist as shown in FIG. 23. Afterimagewise patterning the photoresist through a trench mask, removing aportion of the photoresist from the top of the metal level inorganicdielectric layer, and removing a portion and leaving a portion of thephotoresist through a thickness of the metal level inorganic dielectriclayer, the structure of FIG. 24 is obtained.

After removing part of the metal level inorganic dielectric layerunderlying the portions of the photoresist removed from the top of theinorganic dielectric layer trenches are formed in the metal levelinorganic dielectric layer as shown in FIG. 25. After removing thebalance of the photoresist from the top of the metal level inorganicdielectric layer and from the vias; and removing the portion of theorganic dielectric etchstop material layer underlying the trenches untilthe thin inorganic dielectric layer is reached, the structure of FIG. 26is obtained. One then removes the portion of the organic via leveldielectric layer underlying the vias in the thin inorganic dielectriclayer as shown in FIG. 27. This step completes the opening of via holes.After filling the vias in the via level organic dielectric layer and thethin inorganic dielectric layer, and trenches in the organic dielectricetchstop layer and metal level inorganic dielectric layer with a metalthe structure of FIG. 18 is obtained. The process may be repeated toobtain architecture II of FIG. 2. The third embodiment differs from thesecond embodiment in that all dielectric depositions are donesequentially and no masking and plasma etch is done between dielectricdepositions. All masking and etches are done sequentially. This mayrepresent a preferred process flow in certain integrated circuitfabrication facilities.

A fourth embodiment of the invention is represented by the process stepsshown in FIGS. 28-32. The process flow commences after the formation ofthe first-level interconnect or Metal 1. The process flow covers fromVia 1 level through the second-level of interconnect or Metal 2.However, the same processing steps can be repeated again for upperlevels of vias and interconnects. Steps 1-9 for this fourth embodimentare the same as steps 1-9 of the third embodiment as shown in FIGS.19-21 as described above. One then removes the portion of the organicvia level dielectric layer underlying the corresponding removed portionsof the thin inorganic dielectric layer to form vias in the organic vialevel dielectric layer as shown in FIG. 28. One then covers the top ofthe metal level inorganic dielectric layer with a photoresist and fillsthe vias in the metal level inorganic dielectric layer, the organicdielectric etchstop material layer, the thin inorganic dielectric layerand the organic via level dielectric layer with photoresist as shown inFIG. 29.

After imagewise patterning and removing a portion of the photoresistfrom the top of the inorganic dielectric layer; and removing a portionand leaving a portion of the photoresist through a thickness of themetal level inorganic dielectric layer the structure of FIG. 30 isobtained. After removing part of the metal level inorganic dielectriclayer underlying the portions of the photoresist removed from the top ofthe inorganic dielectric layer trenches are formed in the metal levelinorganic dielectric layer as shown in FIG. 31. Thereafter one removesthe balance of the photoresist from the top of the metal level inorganicdielectric layer and from the vias; and removes the portion of theorganic dielectric etchstop material layer underlying the trenches untilthe thin inorganic dielectric layer is reached as shown in FIG. 32.After filling the vias in the via level organic dielectric layer and thethin inorganic dielectric layer, and trenches in the organic dielectricetchstop layer and metal level inorganic dielectric layer with a metalthe structure of FIG. 18 is obtained. Upon repetition of these steps,the architecture of FIG. 2 is obtained. Embodiment four is unique inthat via patterning is entirely independent of metal trench patterning.

While the present invention has been particularly shown and describedwith reference to preferred embodiments, it will be readily appreciatedby those of ordinary skill in the art that various changes andmodifications may be made without departing from the spirit and scope ofthe invention. It is intended that the claims be to interpreted to coverthe disclosed embodiment, those alternatives which have been discussedabove and all equivalents thereto.

What is claimed is:
 1. An integrated circuit structure which comprises asubstrate and (a) an organic layer on a surface of the substrate whichcomprises a pattern of metal lines on the substrate and an organicdielectric on the substrate surface between the metal lines, and whereinthe organic dielectric comprises a dielectric selected from the groupconsisting of alkoxysilane polymers, organic siloxanes,hydroorganosiloxanes, hydrogenmethylsilsesquioxane,hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane,hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane andhydrogenphenylsilsesquioxane, methylated siloxane polymers; polymershaving the formulae [(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n),[(HSiO_(1.5))_(x)(RSiO_(1.5))_(y)]_(n) and[(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n) wherein x=about 6 to about20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and eachR is independently C₁ to C₈ alkyl or C₆ to C₁₂ aryl; organic siliconcontaining polymers having the formulae[H—SiO_(1.5)]_(n)[R—SiO_(1.5)]_(m),[H_(0.4)—SiO_(1.5-1.8)]_(n)[R_(0-1.0)—SiO_(1.5-1.8)]_(m),[H_(0-1.0)—SiO_(1.5-2.0)]_(n)[R—SiO_(1.5)]_(m),[H—SiO_(1.5)]_(x)[R—SiO_(1.5)]_(y)[SiO₂]_(z), wherein R is selected fromsubstituted and unsubstituted straight chain and branched alkyl groups,cycloalkyl groups, substituted and unsubstituted aryl groups, andmixtures thereof the sum of n and m, or the sum or x, y and z is fromabout 8 to about 5000, and m and y are selected such that carboncontaining substituents are present in an amount of less than about 40Mole percent; organic silicon containing polymers having the formulae:[HSiO_(1.5)]_(n)[RSiO_(1.5)]_(m), [H_(0.4-1.0)SiO_(1.5-1.8)]_(n)[R_(0.4-1.0)SiO_(1.5-1.8)]_(m),[H_(0-1.0)SiO_(1.5-2.0)]_(n)[RSiO_(1.5)]_(m), wherein the sum of n and mis from about 8 to about 5000 and m is selected such that the carboncontaining substituent is present in an amount of from about 40 molepercent or greater; and [HSiO_(1.5)]_(x)[RSiO_(1.5)]_(y)[SiO₂]_(z);wherein the sum of x, y and z is from about 8 to about 5000 andy isselected such that the carbon containing substituent is present in anamount of about 40 mole % or greater; and wherein R is selected fromsubstituted and unsubstituted straight chain and branched alkyl groups,cycloalkyl groups, substituted and unsubstituted aryl groups, andmixtures thereof, and mixtures thereof; and (b) an inorganic layer onthe organic layer which comprises an inorganic dielectric selected fromthe group consisting of hydrogensiloxanes, inorganichydrogensilsesquioxanes and combinations thereof, having metal filledvias therethrough which connect to the metal lines of the organic layer;and wherein the hydrogensiloxanes have the formula[(HSiO_(1.5))_(x)O_(y)]_(n), and the hydrogensilsesquioxanes have theformula (HSiO_(1.5))_(n), wherein x=about 6 to about 20, y=1 to about 3,and n=1 to about 4,000.
 2. The integrated circuit structure of claim 1which comprises (c) an additional organic layer on the inorganic layerwhich comprises a pattern of additional metal lines on the inorganiclayer and an organic dielectric on the inorganic layer between theadditional metal lines; and (d) an additional inorganic layer on theadditional organic layer which comprises an inorganic dielectric havingmetal filled vias therethrough which connect to the additional metallines of the additional organic layer.
 3. The integrated circutstructure of claim 2 which comprises one or more further alternatingorganic layers (c) and inorganic layers (d) on the additional organiclayer (c) and inorganic layer (d).
 4. The integrated circuit structureof claim 3 further comprising an organic dielectric layer on each one ormore alternating inorganic layer (d) between the vias and under theadditional metal lines of the alternating organic layer; and aninorganic dielectric on each one or more organic dielectric layerbetween the additional metal lines of the additional organic layer. 5.The integrated circuit structure of claim 2 further comprising anorganic dielectric layer on the inorganic layer between the vias andunder the additional metal lines of the additional organic layer; and aninorganic dielectric on the organic dielectric layer between theadditional metal lines of the additional organic layer.
 6. Theintegrated circuit structure of claim 1 wherein the metal lines and viashave a barrier metal on one or more edges thereof.
 7. A dielectriccoated substrate which comprises: (a) a first dielectric compositionfilm on a surface of a substrate; and (b) a second dielectriccomposition film on the first dielectric composition film; wherein thefirst dielectric composition and the second dielectric composition havesubstantially different etch resistance; wherein either the firstdielectric composition film is organic and the second dielectriccomposition film is inorganic; or the first dielectric composition filmis inorganic and the second dielectric composition film is organic;wherein the organic dielectric comprises a dielectric selected from thegroup consisting of alkoxysilane polymers, organic siloxanes,hydroorganosiloxanes, hydrogenrnethylsilsesquioxane,hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane,hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane andhydrogenphenylsilsesquioxane, methylated siloxane polymers; polymershaving the formulae [(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n),[(HSiO_(1.5))_(x)(RSiO_(1.5))_(y)]_(n) and[(HSiO_(1.5))_(x)O_(y)(RSiO_(1.5))_(z)]_(n) wherein x=about 6 to about20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000. and eachR is independently C₁ to C₈ alkyl or C₆ to C₁₂ aryl; organic siliconcontaining polymers having the formulae [H—SiO_(1.5)]_(n)[R—SiO_(1.5)]_(m),[H_(0.4)—SiO_(1.5-1.8)]_(n)[R_(0.4-1.0)—SiO_(1.5-1.8)]_(m),[H_(0-1.0)—SiO_(1.5-2.0)]_(n)[R—SiO_(1.5)]_(m),[H—SiO_(1.5)]_(x)[R—SiO_(1.5]) _(y[SiO) ₂]_(z), wherein R is selectedfrom substituted and unsubstituted straight chain and branched alkylgroups, cycloalkyl groups, substituted and unsubstintted aryl groups,and mixtures thereof; the sum of n and m, or the sum or x, y and z isfrom about 8 to about 5000, and m and y are selected such that carboncontaining substituents are present in an amount of less than about 40Mole percent; organic silicon containing polymers having the formulae:[HSiO_(1.5)]_(n)[RSiO_(1.5)]_(m),[H_(0.4)SiO_(1.5-1.8)]_(n)[R_(0.4-1.0)SiO_(1.5-1.8)]_(m),[H_(0-1.0)SiO_(1.5-2.0)]_(n)[RSiO_(1.5)]_(m), wherein the sum of n and mis from about 8 to about 5000 and m is selected such that the carboncontaining substituent is present in an amount of from about 40 molepercent or greater; and [HSiO_(1.5)]_(x)[RSiO_(1.5)]_(y)[SiO₂]_(z);wherein the sum of x, y and z is from about 8 to about 5000 and y isselected such that the carbon containing substituent is present in anamount of about 40 mole % or greater; and wherein R is selected fromsubstituted and unsubstituted straight chain and branched alkyl groups,cycloalkyl groups, substituted and unsubstituted aryl groups, andmixtures thereof, and mixtures thereof; and wherein the inorganicdielectric composition film comprises an inorganic dielectric selectedfrom the group consisting of hydrogensiloxanes, inorganichydrogensilsesquioxanes and combinations thereof; and wherein thehydrogensiloxanes have the formula [(HSiO_(1.5))_(x)O_(y)]_(n), and thehydrogensilsesquioxanes have the formula (HSiO_(1.5))_(n), whereinx=about 6 to about
 20. y=1 to about 3, and n=1 to about 4,000.
 8. Thedielectric coated substrate of claim 7 wherein the first dielectriccomposition film is organic and the second dielectric composition filmis inorganic.
 9. The dielectric coated substrate of claim 7 wherein thefirst dielectric composition film is inorganic and the second dielectriccomposition turn is organic.